a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units v (br)dss i c = 100 ma 180 v v (br)gss i g = 100 a v ds = 0 v 20 v v gs(off) i d = 1.0 ma v ds = 10 v 0.5 3.0 v i dss v dss = 180 v v gs = 0 v 1.0 m a v ds(on) i d = 4.0 a v gs = 10 v 3.8 6.0 v | fs| i d = 3.0 a v ds = 20 v 0.9 1.25 s c iss c oss c rss v gs = 5.0 v v ds = 0.0 v f = 1.0 mhz v gs = -5.0 v v ds = 50. v f = 1.0 mhz v gs = v gd = - 50. v f = 1.0 mhz 350 220 15 pf p out v dd = 80 v f = 28 mhz i dq =100 ma p in = 5 w 140 w 80 % silicon n-channel mos fet 2SK410 description: the asi 2SK410 is a silicon n-channel mos fet designed for hf/vhf power amplifier applications. features: ? p g = 17 db typ. at 100 w/28 mhz ? omnigold ? metalization system ? common source configuration ? rohs compliant maximum ratings i d 8 a v dss 180 v v gss 20 v p ch 120 w @ t c = 25 c t ch -55 c to +150 c t stg -55 c to +150 c package style .500 6l flg 1 = collector 2 = base 3&4 = emitter minimum inches / m m .490 / 12.45 .210 / 5.33 .003 / 0.08 b c d e f g a maximum .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / m m .725 / 18.42 h dim k l i j .970 / 24.64 .980 / 24.89 .170 / 4.32 n m .120 / 3.05 .135 / 3.43 .150 / 3.43 .160 / 4.06 .125 / 3.18 .090 / 2.29 .105 / 2.67 .285 / 7.24 .150 / 3.81 .045 / 1.14 e f .725/18,42 i g j k l m a d c b 2x ?n full r h .835 / 21.21 .865 / 21.97 .210 / 5.33 .200 / 5.08 3 1 2 4
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